Abstract
The hot-electron-induced interface state generation in thin (˜8.6nm) oxynitride films prepared by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO2 have been studied. Both MOS capacitors and MOSFETs were used as testing devices. For MOSFETs, charge-pumping current Icp measurement was performed to monitor the increase ΔDit of interface state density. It is found that the optimised RTN and RTO processes could produce devices with a significantly improved resistance against the hotelectron- induced interface state generation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
