Study of InP/GaP quantum wells grown by vapor phase epitaxy

Baranov A.i Baranov A.I,Gudovskikh A S Gudovskikh A S,Kalyuzhnyy N A Kalyuzhnyy N A,Maksimova A A Maksimova A A,Mintairov S A Mintairov S A,Salii R A Salii R A,Uvarov A V Uvarov A V,Vyacheslavova E A Vyacheslavova E A,Yakovlev G E Yakovlev G E,Zubkov V I Zubkov V I

doi:10.21883/tpl.2023.03.55686.19404

Study of InP/GaP quantum wells grown by vapor phase epitaxy

Baranov A.i Baranov A.I, Gudovskikh A S Gudovskikh A S + Show 8 more

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https://doi.org/10.21883/tpl.2023.03.55686.19404

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Journal: Technical Physics Letters

Publication Date: Jan 1, 2023

Affiliation: Saint Petersburg Academic University, Saint Petersburg State Electrotechnical University, Ioffe Institute

#Electrochemical Profiling #Capacitance-voltage Profiling + Show 8 more

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Abstract

We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21 eV, 0.30 eV and 0.93 eV. Keywords: quantum well, capacitance-voltage profiling, electrochemical profiling.

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