Abstract
This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001]InN // [0001]GaN and ( )InN // ( )GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.
Highlights
The narrow band gap InN has been attracting considerable attention for optoelectronic and high-speed electronic devices, thanks largely to its narrow direct band gap energy of 0.7 eV, high electron mobility, and electron saturation velocity [1,2,3,4]
The InN nanorods were grown under N-rich condition, and the InN films were close to stoichiometry confirmed by TEM-EDX analysis
The XRD patterns clearly reveal several strong diffraction peaks corresponding to the (0002) of InN, (0004) of InN, (0002) of GaN, and (0004) of GaN. These results indicate that high-quality InN films/ nanorods with a hexagonal structure were preferentially oriented and grown on GaN template
Summary
The narrow band gap InN has been attracting considerable attention for optoelectronic and high-speed electronic devices, thanks largely to its narrow direct band gap energy of 0.7 eV, high electron mobility, and electron saturation velocity [1,2,3,4]. Recent reports have revealed promising results in the application of InN epilayers for chemical sensors [5]. Improvements in growth techniques over the past few years have enabled the fabrication of high-quality InN epilayers through molecular beam epitaxy (MBE) [6], radio-frequency metalorganic molecular beam epitaxy (RF-MOMBE) [7], sputtering, and metalorganic chemical vapor deposition (MOCVD) [8]. InN is usually grown on a sapphire substrate using various buffer layers, such as ZnO, GaN, AlN, and 6H-SiC [9,10,11,12].
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