Abstract
Even though anodizing has been proved to be a highly efficient oxidation approach of single crystal SiC, the oxidation mechanism is still unrevealed. In this work, the initiation and development of the local oxidation phenomenon during anodizing of SiC have been experimentally studied. Local oxidation occurred on the charge carrier-rich areas like damaged areas and doping sites. The oxidation of the damaged areas has a higher priority compared with that of doping sites during anodizing of SiC. For anodizing of damaged areas, the protrusions generated by local oxidation gathered around the damaged areas. In contrast, protrusions were randomly distributed for anodizing of doping sites.
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