Abstract
Interactions between neighboring cells often occur in a semiconductor silicon detector array. That is, there are high-energy particles incident on one cell of the detector that generate an electric signal for the cell, while weak signals are also generated in other neighboring cells. Therefore, isolation of the detector cells is an important factor in the performance of the detector, particularly for its energy resolution. To eliminate the dead space in the 3D-trench-electrode detector proposed by Brookhaven National Laboratory, a novel three-dimensional (3D) detector, the 3D-Open-Shell-Electrode Detector (3DOSED), was proposed in 2018, in which good isolation between cells was achieved. To verify this and determine the optimal structure design, a Silvaco technology computer-aided design simulation tool was used to simulate the electrical characteristics of the detector in 3D. The distributions of the electric field and the weighting field of 3DOSEDs were obtained with different opening gap angles. A single minimum ionizing particle was used that was incident vertically on the middle of the central collection electrode and peripheral trench electrode of the detector cell, according to the Ramo theorem of the principle of induced-current generation, and the mathematical software matlab was employed to calculate the induced current and carrier drift time. The interference current between the neighboring cells of a 3DOSED was obtained. Good isolation was found between neighboring cells in the 3DOSED.
Highlights
Due to its small bandgap width, high carrier mobility, and easy processing, silicon has rapidly become one of the most widely used semiconductor detector materials in the world
It can be seen from the simulation results that the electric field distributions of the detector were uniform, which indicated that the openings in the peripheral trench electrode had little effect on the distributions of the electric fields
With MIP1 vertically incident on cell A (Fig. 2), the induced current that was collected in cell A was generated in cell A of the detector
Summary
Due to its small bandgap width, high carrier mobility, and easy processing, silicon has rapidly become one of the most widely used semiconductor detector materials in the world. It often appears in the manufacture of detectors of ultraviolet, visible, and infrared radiation, which are widely used in high-energy physics, astrophysics, nuclear medicine, and other fields.. To enhance the radiation tolerance of the detector, in 2009, the scientists at Brookhaven National Laboratory proposed a new type of 3D silicon detector, the 3D-trench-electrode detector.13,14 In this device, one type of electrode (cathode or anode) is made into a trench shape that surrounds the other column-shaped electrode (anode or cathode), which isolates the detector cells from each To enhance the radiation tolerance of the detector, in 2009, the scientists at Brookhaven National Laboratory proposed a new type of 3D silicon detector, the 3D-trench-electrode detector. In this device, one type of electrode (cathode or anode) is made into a trench shape that surrounds the other column-shaped electrode (anode or cathode), which isolates the detector cells from each
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