Abstract
Optical properties of quasi zero-dimensional semiconductor quantum dots were studied by photoluminescence and Raman spectroscopy. The dependence of photoluminescence on substrate orientation and Raman spectra of single and multiple InAs/GaAs quantum dot structures are reported. The samples were grown on (100) oriented GaAs substrates without and with 3° misorientation towards (110) by metal-organic vapor phase epitaxy in the Stranski–Krastanow regime. Strong dependence of photoluminescence properties of the quantum dot structures on substrate misorientation is shown. The InAs-related features are observed in the macro-Raman spectra and micro-Raman spectra. The effects of confinement, alloying and strain on PL and on phonon spectra are discussed.
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