Abstract
In order to improve the rectification efficiency and current–voltage characteristics of self-switching diodes (SSD) the DC response is analyzed using technology computer aided design (TCAD). It is demonstrated that by varying geometrical parameters of L- and V-shaped SSDs or changing the dielectric permittivity of the trenches, a near zero threshold voltage can obtained, which is essential for energy harvesting applications. The carrier distribution inside the nanochannel is successfully simulated in two-dimensional mode for zero-, reverse-, and forward-bias conditions. This process allows for the evaluation of the effect of the lateral surface-charge on the formation and spatial distribution of the depletion region, in addition to, obtaining information on the physics of the SSD through the propose optimized geometries that were designed for tailoring and matching the desired frequencies of operation. The numerical results showed some insights for the improvement of the rectification efficiency and integration density using parallel SSD arrays.
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