Abstract
Two-dimensional/two-dimensional (2D/2D) heterojunctions are one of the most adaptable technological methods for the fabrication of photodetectors due to their novel properties. In this paper, we present the fabrication of a p-GeSe/n-Hf0.05Sn0.95Se2 heterostructure by depositing GeSe via the thermal evaporation technique on Hf0.05Sn0.95Se2 crystal. The surface morphology is investigated by scanning electron microscopy. The structural characteristic is studied by X-ray diffraction technique. The heterostructure is characterized by studying the I-V characteristics recorded with the aid of a Keithley 4200 SCU under dark and illuminated conditions. The illumination was varied w.r.t. incident intensity and wavelength, and the lowest ideality factor (3.15) was achieved under blue light illumination with an intensity of 120 mW/cm2. The photoresponse characteristics of this heterojunction are also studied under different illuminations at zero bias voltage and at room temperature. The highest photocurrent of 113.09 μA is obtained under blue light with 120 mW/cm2 intensity.
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