Study of hydrogenation on near-surface strained and unstrained quantum wells

Abstract

We have studied the effects of hydrogenation on the luminescence efficiency of near-surface strained InGaAs/GaAs and unstrained GaAs/AlGaAs quantum wells (QWs). By using two different materials with an analogous structure, we have been able to clarify the effects of substrate temperature, ion dosage, strain profile in the material, and material quality on the local hydrogen concentration. This in turn modifies the behavior of hydrogen, the formation of hydrogen-related defects, and the variation of luminescence efficiency from the near-surface QW.