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Abstract
HfO 2 thin films were deposited using e-beam gun evaporation with ion assisted deposition (IAD) of low energy oxygen ions (40–100 eV) from an end-Hall ion source. A comparison was made using Hf and HfO 2 starting materials. The index of refraction was measured as a function of the ion source voltage and compared to results without IAD. Application to high power laser mirrors was verified by measurements of laser damage thresholds at 1.06 μm.
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