Abstract
To study the origin of HF defects in thin, bonded silicon-on-insulator (SOI) wafers fabricated by the plasma assisted chemical etching (PACE) process, the dependence of HF defects on original wafers [wafers fabricated by Czochralski method (CZ wafers), hydrogen-annealed CZ wafers and epitaxial wafers] was investigated. It was shown that HF defect density was affected by the type of original wafer used, and no HF defect was detected when epitaxial wafers were used as bond wafers. HF defects were detected on 0.2 µm or thinner SOI wafers with CZ wafers. Crystal originated particles (COPs) at SOI and buried oxide (SOI/BOX) interface were found to be the main origin of HF defects by inspecting light point defects (LPDs) at the SOI/BOX interface.
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