Abstract
Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers. Keywords: SiC, heteroepitaxy, cubic silicon carbide, X-ray diffractometry, Hall effect, photoluminescence.
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