Abstract
The dynamic behavior of the thermal transport characteristics in the active region of AlGaN/GaN transistors was investigated experimentally. The transient temperature rise, the sectional temperature distribution, and the heat transport characteristics were all measured using the Schottky gate junction voltage characteristics method. The results show that three steps were observed in the transient temperature rise and/or Schottky gate voltage drop curves. The transient temperature rise behavior at different positions in the active region under various power conditions is discussed in detail. In addition, the heat transport delay in the active region of the AlGaN/GaN transistors is also studied. The results indicated that the transport velocity of the heat is 1.47 m/s. This is important when changes occur to the electrical characteristic parameters of the device, because any heat transport-related delay would also induce associated delays in the changes to the electrical characteristic parameters in the AlGaN/GaN transistors.
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