Abstract
The grain size distribution (GSD) and related electrical activity of boron heavily doped amorphous LPCVD thin films were studied according to the heat treatment durations. Results show that GSD approaches a logarithmic-normal form at a short annealing duration and for crystalline fractions around 5%, demonstrating that the crystallization process occurs with depletion nucleation sites; and becomes a pure log-normal for crystalline fractions around 25% after 15 min anneal. The fast change from log-linear to log-normal distribution in the GSD allows boron to acquire its maximum activity during a short annealing duration under 700 °C annealing temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
