Abstract
Ge0.998Pb0.002 photodetectors (PDs) with a GePb layer grown on n-type Ge (100) substrate by magnetron sputtering epitaxy were fabricated by complementary metal-oxide semiconductor (CMOS)-compatible technology. For Ge0.998Pb0.002 PDs, the room-temperature dark current density at -1 V was 3.3 A/cm2. At room temperature, the GePb PDs demonstrated a longwave cutoff of 2.5 μm and the optical responsivities of GePb PDs ranging from 1500 nm to 2000 nm were measured. A temperature dependence optical characterization of these detectors was conducted and temperature-dependent energy bandgaps of Ge0.998Pb0.002 were derived from the photocurrent spectra.
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