Abstract
Ge‐Sb‐Te superlattice is a new electronic material that is capable of storing nonvolatile phase‐change memories with very low energy consumption. Topological descriptors are numerical values given to molecular structures that may be used to predict specific physical/chemical characteristics. In this work, we have investigated topological descriptors of the Ge‐Sb‐Te superlattice structure based on ev and ve‐degree. We have calculated the Zagreb, geometric‐arithmetic, Randic, and atom‐bond connectivity indices of the Ge‐Sb‐Te superlattice structure using the ev‐ and ve‐degrees. This kind of research may be beneficial for understanding the structure’s chemical and biological activity.
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