Abstract
The solubility of gallium nitride in supercritical ammonia containing an alkaline mineralizer, sodium amide, was investigated. Twenty dissolution processes were carried out at constant ammonia pressure and constant mineralizer concentration. In each process, the solubility of four ammonothermal GaN crystals was analyzed at four different temperatures and five different times. By analyzing the total mass loss of all crystals in a given process, the time interval at which the solubility of GaN stopped changing was determined, indicating the saturated state of the solution. Based on these data, the solubility curve was determined. Retrograde solubility was observed. The impact of surface preparation of GaN samples and its correlation with the quantity of dissolved material was investigated. It was shown that as-grown and optically smooth surfaces dissolved slower than mechanically treated (000-1) GaN surfaces. These are important data for ammonothermal crystallization processes using native GaN seeds with differently prepared (000-1) surfaces.
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