Study of gamma-ray effects on relaxation oscillator based on unijunction transistor

Abstract

The object of this research is all the semiconductor unijunction transistor device (UJT) parameters that affect its operation as 1.67 kHz saw-tooth relaxation oscillator circuit under the influence of gamma-irradiation dose. Relaxation oscillators are widely used in function generators, electronic beepers, inverters, blinkers, and voltage-controlled oscillators. The properties of UJTs are like those of other semiconductor devices are greatly affect by irradiation. Its electrical characteristics and the output voltage waveforms of the relaxation oscillator circuit were investigated and plotted as a function of different gamma-dose levels. The type of semiconductor, the design of the device and the type of radiation are affected the magnitude of this change. Where, it is shown that increasing gamma dose up to 3.0 MGy leads, the peak voltage (VP) to be decreased from 3.71 Volts down to 2.9 Volts, while the valley voltage (VV) to be increases from 1.54 Volts up to 1.89 Volts, leading to a pronounced narrowing on the negative resistance region. As a result, both the output signal voltage amplitude and the frequency of the relaxation oscillator circuit were shown to be functions of the gamma-irradiation dose. Where, the initial values of the output signal voltage amplitude were reported to be 2.54 Volts decreased to the value of 2.13 Volts, while its frequency was 1.67 kHz increased up to 1.85 kHz, respectively, due to gamma-exposure levels up to 3.0 MGy using the GammaCell-220 (National Center for Radiation Research and Technology of Egypt).