Abstract

Cu(In,Ga)Se2 (CIGS) solar cells have achieved the highest efficiencies among thin-film solar technologies. At low temperatures ( V oc and FF with high Ga content at the interface. We show that the insertion of a Ga-rich layer favors the formation of ordered vacancy compound phases, and the absence of Ga during the last stage of the process impacts the overall element diffusion. Optimized Ga gradient leads to 17.8% efficiency solar cells without antireflecting coating or KF postdeposition treatment.

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