Abstract
In order to study the heteroepitaxial growth of gallium arsenide on silicon(100), Small Angle X-ray Scattering (SAXS) experiments have been performed at the synchrotron radiation facility Photon Factory at KEK. The samples studied have been grown by both Atomic Layer Epitaxy and Metal-Organic Chemical Vapor Deposition. The two dimensional SAXS patterns present different features depending on the growth technique
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