Abstract
An analytical model of a resonant micro-electromechanical system (MEMS) with a high-electron mobility transistor (HEMT)-like structure and an array of resonant cantilevers over its two-dimensional electron gas (2DEG) channel is developed. To account for impact of fringing, spatial distributions of the electric field and sheet electron density at the surface of the HEMT channel are calculated in parametric form. Resistance of the 2DEG channel and frequency-dependent ac amplitude of the source–drain current are derived. The developed model allows evaluation of impact of fringing electric field on output source–drain current for any different number of cantilevers in the array at different spacing between them and can be used for device optimization.
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