Study of ferroelectric material to optimize supply voltage in n-type organic transistors

Benjamin Ramos,David Buso,Marc Ternisien

doi:10.1109/nmdc.2016.7777142

Study of ferroelectric material to optimize supply voltage in n-type organic transistors

Benjamin Ramos, David Buso

https://doi.org/10.1109/nmdc.2016.7777142

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Publication Date: Oct 1, 2016

Citations: 5

Affiliation: Laboratory on Plasma and Conversion of Energy, National Polytechnic Institute of Toulouse, Université Toulouse III - Paul Sabatier, French National Centre for Scientific Research

#N-type Organic Transistors #Layer In Organic Field-effect Transistors + Show 8 more

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Abstract

In this study, we tried to evaluate the impact of two dielectric materials (PMMA and P(VDF-TrFE)) on the performance of n-type organic field-effect transistors (OFETs). PMMA is the reference as a dielectric layer in OFETs and P(VDF-TrFE) is a ferroelectric material which has a high permittivity (e R =10). For this study, we elaborated four different structures and we reduced supply voltage by 2 with a stack of P(VDF-TrFE)/PMMA in comparison to an OFET with a PMMA layer.

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