Abstract
Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion etched p-ZnTe samples. The averaged thickness of the surface damaged layer is found to be in the range of 1.0-1.5µm and the etch-induced defect density is in the order of 1018cm-3. The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency (rf) power. With the aid of related theories, we discuss the effects of the rf plasma power and the concentration of CH4/H2 on the damage, disorder and the second-order Raman structures in p-ZnTe samples.
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