Abstract
Al/c-Si(n) interfaces have been prepared by depositing Al on silicon washed in ordinary water (conductivity > 40 microsiemens cm -1) after etching. The capacitance-voltage characteristics of such junction devices have been studied for various frequencies. The C-V characteristics explicitly feature the interface state capacitance. The interface state density of ~1010cm-2 located at 0 · 52eV below the conduction band edge has been estimated from the C-V data. The capture cross section for the states has been estimated as ~10-14cm-2.
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