Abstract

We investigated the exciton dynamics in InGaAs/InP quantum wells using a novel infrared tunable femtosecond laser source, based on an optical parametric frequency converter pumped by a femtosecond Ti:sapphire laser. The wide tuning range of this source allowed to excite three different excitonic resonances in the absorption spectrum of the sample. The n=1 heavy-hole excitons are approximately eight times more efficient than free electron-hole plasma in the absorption saturation. This value is much higher than that measured in GaAs quantum wells. The exciton ionization time constant of the n=1 and n=2 heavy-hole excitons has been measured to be 170 and 100 fs, respectively. No evidence of the n=1 light-hole exciton dynamics was found in the measurements. The study of the dynamics at the n=2 heavy-hole resonance allowed the measurement of a n=2 to n=1 intersubband relaxation time of 1 ps.

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