Abstract
We present the pulsed de magnetron sputtering method in which a nickel target is sputtered in a mixture of argon and reactive oxygen gas. The flow modulation of oxygen is proposed to enhance the deposition process in the preparation of the oxide films. The flow rate of oxygen is modulated periodically in time and during deposition when oxygen flows is cut off to remove the oxide formed on the target. A modulated deposition process was monitored directly by optical emission spectroscopy, measuring the deposition rate and the partial pressure. The effect of the different oxygen flow, which was changed periodically, changes with time on the target potential and the deposition rate were investigated. The variations of the Ni/O atomic ratios in NiO films were revealed by SIMS method.
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