Abstract
The luminescence kinetics of Yb3+ donors and Ho3+ acceptors is quantitatively studied in gallium—gadolinium garnet (GGG) crystals doped with Yb3+ and Ho3+ ions. It is shown that the sensitisation of transitions in Ho3+ ions occurs due to migration-accelerated (hopping) energy transfer. The microparameters of donor—donor energy transfer are determined at 300 and 77 K. The microparameters of donor—acceptor energy transfer are found at the same temperatures at the first stage of successive sensitisation (resulting in the population of the 5I6 state of Ho3+ ions) and at the second stage of successive sensitisation of the 5S2, 5F4→5I8 transition in Ho3+ ions. At the second stage of sensitisation, the values of the microparameter of reverse energy transfer are also determined. The possibility of obtaining lasing at sensitised transitions in Ho3+ ions in Yb3+:Ho3+:GGG crystals pumped into the absorption band of Yb3+ ions is discussed.
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