Abstract
The results of a study on the electronic states and valence band offset (VBO) in heterostructures of the transition metal oxide LaNiO3 (LNO)/SrRuO3 (SRO) grown on (001) SrTiO3 (STO) substrates are reported. X‐ray photoelectron spectroscopy (XPS) data reveal the presence of Ni2+ states in LNO layer that can develop a reduced bandwidth of O‐2p and Ni‐3d. Further analysis of XPS data confirms the presence of a VBO, and the value of VBO is found to be +0.02 eV and –0.38 eV for the bilayers of STO/LaNiO3/SrRuO3 (BL‐1) and STO/SrRuO3/LaNiO3 (BL‐2), respectively. Distinct signs of VBO are noticed between the bilayers due to the relative shift of the valence band of the top layer with respect to the bottom layer. Such band shifts can lead to the charge transfer across the (3d−4d) interface, which significantly modifies the global electronic transport and magnetic properties of the bilayers. A detailed discussion on the underlying physical phenomena of electrical transport and magnetic responses triggered by the interface is also incorporated herein.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.