Abstract
A theoretical study, by using Nonequilibrium Statistical Ensemble Formalism (NESEF), on the nonlinear transport of electrons in the transient and steady state of n-doped 4H-SiC under the influence of high electric fields is presented. The electron drift velocity and the nonequilibrium temperature are obtained, and their dependence on the electric field applied in the orientation parallel or perpendicular to the c-axis is derived and analyzed.
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