Abstract
The features of electrochemical deposition of copper layer on titanium and tantalum flexible substrates, as well as modes of sequential electrochemical deposition of tin layer on Cu/Ti and Cu/Ta and nickel layer on Sn/Cu/Ti and Sn/Cu/Ta from corresponding electrolyte solutions were studied by cyclic voltammetry. Deposition potentials for each metal layer were determined taking into account the type of substrate, and a wide set of the Cu-Sn-Ni/Ti and Cu-Sn-Ni/Ta stable precursor films were synthesized. The stage of annealing in an active sulfur atmosphere (sulfurization) has been optimized in order to obtain the Cu2NiSnS4 stable compounds. Based on the obtained XRD and Raman spectroscopy data, it was found that annealing in active sulfur atmosphere at 550 °C for 60 minutes is necessary to synthesize the Cu2NiSnS4 stable single-phase compounds with polycrystalline structure on Ta and Ti substrates
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