Study of electrical effect of transition-metal dichalcogenide-MoS2 layer on the performance characteristic of Cu2ZnSnS4 based solar cells using wxAMPS

Abstract

In this study, a numerical investigation of the effects of thickness, carrier and defect density of the copper–zinc–tin–sulphide (CZTS) absorber for a typical CZTS based solar cell and also effects of MoS2 formation between CZTS/Mo was demonstrated for the first time using wxAMPS. We have studied how the output parameters change with absorber and of the (n, p)-type MoS2 and so suggested two different cell structures. By using the baseline structure, an optimum thickness value of 2000 nm was determined for CZTS prior to do carrier and defect density studies. Then the carrier and defect density were found as the same value 1014 cm−3.We have found out that the formation of p-MoS2 interfacial layer in CZTS thin film solar cells induce positive effect. However, the efficiency of the solar cell was decreased with n-MoS2 layer which has detrimental effect on CZTS solar cell by creating an additional back contact diode with p-CZTS and Mo.Consequently, efficiencies around 18.30% were obtained through optimization while that of baseline structure was 12.38%. Our results have shown that the suggested structures both produce higher efficiencies than that of baseline structure and may lead to produce more efficient CZTS-based solar cells.