Abstract
The electrical conductivity properties were studying characteristics of SnO2:In2O3 thin films, prepared by thermal evaporation method by Magnetron Sputtering Technology with high quality. Optimal conditions for obtaining thin film with maximum gas sensitivity where revealed. During the results of this study was clear that the maximum sensitive degree for doped tin dioxide thin film by Indium at a temperature less than undoped tin dioxide thin films. Sensitivity values were studied for samples with the power of function δ~APβ , where found the value of β decreases from 0.88 for the SnO2 films to 0.32 for the doped films with indium.
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