Study of Electrical and Photoelectric Phenomena in Structures Based on Manganese Silicon Contact with Manganese High Silicon Membrane

Abstract

The physical properties of the manganese silicide layer formed on the silicon surface have been studied. The layer of manganese silicides was obtained by the solid phase reaction method on the silicon surface, in which a very pure manganese metal, a chemically refined monocrystalline silicon surface, was obtained. After the formation of manganese silicides on the surface of silicon, its crystal lattice structure, morphology and phase composition were studied using electron and electron microscope devices, electron microscope JXA-840 and electron microscope XL 30SFED. It has been shown that the formation of a layer of manganese silicon on silicon depends on the dynamic process of stable and unstable conditions.