Study of electrical and dielectric behavior of Tb+3 substituted Y-type hexagonal ferrite

Abstract

A series of Y-type hexa-ferrites with composition, Ba2Zn2TbxFe12−xO22 (0⩽x⩽0.1), were synthesized by the sol–gel auto-combustion technique. The X-ray powder diffraction technique was employed to confirm the formation of Y-type phase. The dispersion in dielectric constant, dielectric loss, and σac with frequency shows that the dispersion at low frequencies is due to Maxwell–Wagner type of interfacial polarization in general and the hopping of charge carrier between Fe2+ and Fe3+ ions. The substitution of Tb+3 inhibit the valence exchange of Fe+2 and Fe3+ and therefore the dielectric permittivity decreased. The DC resistivity increased from 7.29×107 to 4.73×108Ωcm with increasing Tb-contents due to the unavailability of Fe3+ ions at octahedral sites. The enhanced resistivity of Y-type hexa ferrites makes them suitable candidates for multi-layer chip inductor applications.