Abstract
Abstract Phosphorus ions have been implanted along the [110] axis of silicon samples at 200 KeV energy, room temperature and doses of 1 × 1014, 5 × 1014, 7.5 × 1014, 1 × 1015 at/cm2. The dose dependence of the electrical activation process of the implanted atoms has been studied by comparison between the isochronal recovery data and carrier concentration profiles at different annealing temperatures. The activation energy of the recovery process that takes place in the tail of the penetration profile, the region of well-channelled ions, has been determined by means of isothermal annealing treatments and sheet electrical resistivity measurements: the experimental value found E = (1.66 ± 0.10) eV is in agreement with the value attributed to the dissociation of negatively charged E-centres.
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