Abstract
Abstract Now days, the establishment of spacers is in wide usage in three-phase Gas Insulated Busduct (GIB) for providing mechanical support and better insulation to the conductors. The region of the intersection of SF6 gas, enclosure end and the spacer is one of the weakest links in GIB, so the major concentration is done on minimization of electric field stress at this junction by using Functionally Graded Material (FGM) technique. The other incidents of insulation failures are due to several defects like depression, delamination etc. reduces the dielectric strength of the spacers. In this paper, an FGM post type spacer has been designed for a three-phase GIB under depression and further electric field stress at Triple Junction (TJ) is reduced by introducing a metal insert (MI) nearer to the TJ. Several filler materials are used as doping materials for obtaining different permittivity values using FGM technique to achieve uniform electric field stress. Simulation is carried out for the designed spacer at various operating voltages with different types of FGM gradings. The effect of depression with different dimensions and positions is analyzed before and after inserting MI to the FGM post type spacer in three-phase GIB.
Highlights
Gas Insulated Busduct (GIB) is in wide use, to meet the high electrical demand with low transmission losses and good efficiency
An Functionally Graded Material (FGM) post type spacer has been designed for a three-phase GIB under depression and further electric field stress at Triple Junction (TJ) is reduced by introducing a metal insert (MI) nearer to the TJ
The 2D simulation model of FGM post type spacer for a three-phase GIB with GL-FGM, GH-FGM and GU-FGM gradings with different permittivity values are studied to analyze the effect of depression with several observations as listed below. – The electric field stress at the conductor’s ends is more than that of the enclosure end for all the three conductors as the conductors are with high potential compared to the potential of enclosure end. – High electric field stress is observed at the TJ of enclosure end of conductor B rather than conductors A and C, the defect depression is introduced at this conductor. – The electric field stress has been increased drastically at TJ if the depression is located at grading 2
Summary
Gas Insulated Busduct (GIB) is in wide use, to meet the high electrical demand with low transmission losses and good efficiency. Few researchers [5,6,7,8,9] has observed that Gas Insulated Substation leads very fast transient overvoltage’s and their associated transient currents during switching operations and analyzed parameters like arcing time, pre-arcing time, secondary discharges, trapped voltages, and level of contamination to design an appropriate switch to prevent induced current from faultproof earthing switches They developed an analytical model to calculate ground resistance, step and touch potentials of the proposed GIS grounding system with proper concrete foundations and designed current sensors to measure the leakage current through the bushing insulation and surge arrester blocks
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