Abstract

The photovoltaic performance (efficiency η) of an ITO/CdS/CdTe structure cell is studied in this article according to its electrical properties. The study is carried out by simulation with SCAPS (Solar Cell Capacitance Simulator) whose mathematical model is based on solving the equations of Poisson and continuity of electrons and holes. An electrical conversion efficiency of 23.58% is obtained by optimizing the mobility of the electrons (100 cm2/Vs), that of the holes (25 cm2/Vs), the density of electrons (1015 cm-3), the density of the effective states in the conduction band (7.9 × 1017 cm-3) and the electronic affinity (3.85 eV) of the CdTe absorbent layer.

Highlights

  • The very high solar potentials in Sahelian countries (5.7 kWh/m2/day on the ground of solar energy) [1], do not relate the equivalent photovoltaic solar performances of the panels installed in these places

  • This paper presents a study by simulation of heterojunction CdTe solar cells by SCAPS simulation according to the parameters of the components of solar cells

  • The efficiency of the CdTe/CdS solar cell reached 21.34% similar to that of a practical CdTe based solar cell [11]. This proves that our solar cell model is valid and can be used to perform a simulation analysis of its performance with different parameters of the material

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Summary

Introduction

The very high solar potentials in Sahelian countries (5.7 kWh/m2/day on the ground of solar energy) [1], do not relate the equivalent photovoltaic solar performances of the panels installed in these places. They are far lower than the powers obtained by the standard test conditions (irradiation: 1000 W·m−2, module temperature: 25 ̊C, spectral distribution of the radiation: AM 1: 5). A photovoltaic panel whose surface temperature exceeds 25 degrees, loses up to half a percent of efficiency per additional degree [2]

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