Abstract

In the present work we have studied the temperature dependence of two most important characteristics of the photodiodes (BPW 21and BPW 34B), namely, the ideality factor and the carrier lifetime; both of which are found to change significantly at low temperature. The effective carrier lifetime measured by the Open Circuit Voltage Decay method (OCVD) shows a gradual increase in value from 350K to about 250K then sharply decreases by about thirty percent of its highest value at liquid nitrogen temperature, the trend being similar for both the devices. The dark forward current–voltage characteristics over the same temperature range yield the value of ideality factor which increases nearly by a factor of three for both the photodiodes at the liquid nitrogen temperature. The nature of variation of both the parameters has been qualitatively accounted for in terms of the recent tunneling models. The data generated for the first time for the devices and their broad theoretical understanding will help to improve design and application of the photodiodes, particularly at low temperature.

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