Abstract
The effect of SiH4 source gas heating on the properties of hydrogenated microcrystalline silicon film grown by plasma-enhanced chemical-vapor deposition was investigated to improve the crystallinity and inhomogeneities at the early stage of growth on an amorphous substrate such as glass. Optimization of the deposition conditions for μc-Si:H film structure and characteristics was carried out for a film around 1000 Å thickness and as a function of the cathode heating temperature Tc. The grazing incidence x-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, atomic force microscopy, and UV-visible spectroscopic ellipsometry results showed that the SiH4 gas heating significantly improved the crystallinity and inhomogeneities from the early stage of Si thin film growth at Tc≳550 °C and Ts of 180 °C condition. The role and effect of the cathode heating in the μc-Si:H growth is discussed.
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