Abstract
The effect of SiH4 source gas heating on the properties of hydrogenated microcrystalline silicon film grown by plasma-enhanced chemical-vapor deposition was investigated to improve the crystallinity and inhomogeneities at the early stage of growth on an amorphous substrate such as glass. Optimization of the deposition conditions for μc-Si:H film structure and characteristics was carried out for a film around 1000 Å thickness and as a function of the cathode heating temperature Tc. The grazing incidence x-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, atomic force microscopy, and UV-visible spectroscopic ellipsometry results showed that the SiH4 gas heating significantly improved the crystallinity and inhomogeneities from the early stage of Si thin film growth at Tc≳550 °C and Ts of 180 °C condition. The role and effect of the cathode heating in the μc-Si:H growth is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
