Abstract
This paper presents the study of drain induced barrier lowering (DIBL), threshold voltage roll-off (ΔVt roll-off) and current in Carbon nanotube Field-effect transistor (CNTFET). Analytical expressions for ΔVt roll-off and electrostatic scale length λ have been derived under quantum capacitance limit. It is observed that electrostatic scale length is linearly proportional to (tox/d) and CNTFET devices show less short channel effects (SCEs) than the Si-MOS devices. The derived current equation is different from the equation proposed in the literature. This equation is more efficient in predicting the current value for the ultra-deep submicron CNFET devices. The developed analytical expressions in this paper show an excellent matching with experimental and Monte-Carlo simulation results.
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