Abstract
<p>Materials with perovskite crystal structure represent an interesting class of materials which, due to their simple structures and unique electronic and dielectric properties, has a great potential for applications in various technological fields, such as mechanical, electro-optic and semiconducting. We perform calculation of density of states (DOS) and band structures for fluoride perovskite like RbMgF<sub>3</sub> using the full potential linearized augmented plane wave (FP-LAPW) method. To calculate the electronic properties, the exchange-correlation potential has been applied by using the generalized gradient approximation (GGA). From the calculation the lattice parameter of RbMgF<sub>3</sub> found to be 4.139 Å. The band gap of RbMgF<sub>3</sub> through the electron energy bands by GGA is obtained as 7.6 eV showing insulating behavior which is in good agreement with the available experimental data as well as previously calculated results.</p><p><strong>Journal of Nepal Physical Society<br /></strong>Volume 4, Issue 1, February 2017, Page: 23-26</p>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
