Abstract
The purpose of this work is to study the influence of different parameters on short-circuit type III (SC-III) robustness limit of the IGBT and freewheeling diodes (FWD) beyond the specified datasheet values. SC-III measurements without gate-emitter voltage (VGE) clamping show a reduced SC-III safe operating area (SOA) at higher DC-link voltages because of high collector current peaks (IC,peak) induced by transient gate-emitter overvoltage and subsequent high negative diC/dt values. By applying a VGE clamping circuit, SC-III last-pass collector-current (IC,sat,Lastpass) can be fully recovered to the level of SC-I, even though the IGBT and diode encounter harder conditions in the SC-III event. Parameters such as parasitic inductance (Lpar), load current (Iload) and temperature (Tstart) have an influence on the SC-III robustness limit of the IGBTs and FWDs. Also, the second reverse-recovery peak of the FWD during an SC-III event is strongly influenced by whether the gate-emitter voltage is applied across the sense or load-emitter terminal.
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