Study of dielectric parameters of hexagonal boron nitride thin film fabricated by RF magnetron sputtering method

Abstract

We report the fabrication of hexagonal boron nitride (hBN) thin films over a sizable area (4 cm2) on a glass substrate by adjusting the deposition time during the radio frequency magnetron sputtering process. As-prepared hBN films were characterized using Raman spectroscopy, and we found the distinctive E2g vibration band at 1366 cm-1, which ensures the presence of hBN in its bulk form. AFM was used to examine how the deposition time affected the surface morphology. It has been found that the sputtered film is made up of large (about 1 μm) hBN flakes. Impedance measurements were made to determine the dielectric parameters of the hBN films. The specific capacitance of the hBN films is found to be 0.04 μF/cm2, and their resistances have been found to be as high as 105 Ω. This study shows that for an hBN film to have a high specific capacitance, less deposition time is needed during the sputtering process.