Abstract
The dielectric loss of parallel-plate Pt/Bi1.5MgNb1.5O7 (BMN)/Pt thin film varactors were investigated. The effects of four extrinsic loss mechanisms were discussed. The results showed that the loss mechanism of conduction electrons, local polar regions, and universal relaxation contributed little to the BMN thin film varactors. However, the losses owing to charged defects were found to be the mainly loss mechanism at low frequency (below 1 MHz). The experimental data were in good agreement with the ω1/3 power law. We studied the effect of charged defects mechanism using BMN thin films annealing in different air conditions. It is clearly seen that the charged defects were associated with oxygen vacancies. In the frequency range 100 MHz-6 GHz, the losses of BMN thin film varactors did no fit the charged defects mechanism very well, which were due to the additional losses induced by electrodes, parasitic capacitances, and test equipments. The study of extrinsic loss mechanisms provided useful information for the deposition, varactor design, and the dielectric properties optimization of the BMN thin films.
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