Abstract
In this work, charge collection profiles of non-irradiated and irradiated 150µm thick p-type pad diodes were measured using a 5.2GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1MeV neutron equivalent fluences of 2, 4, 8, and 12 × 1015cm−2 with 23MeV protons. The Charge Collection Efficiency profiles as a function of depth are extracted by unfolding the data. The results of the measurements are compared to the TCAD device simulation using three radiation damage models from literature which were tuned to different irradiation types and fluences.
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