Abstract
Single-crystal 125Te-doped GaAs has been prepared by liquid-phase-epitaxy and examined by 125Te Mossbauer spectroscopy to search for a proposed tellurium-vacancy acceptor complex. All samples were characterised by standard electrical measurements. Mossbauer parameters of Te-donor and Te-acceptor sites are found to be indistinguishable and consistent with a nearest-neighbour site symmetry which is cubic. This finding is in contrast to the site symmetry of a proposed acceptor complex composed of a Te impurity on the As site and a nearest neighbour vacancy on the Ga site. Broad resonance lines are observed from samples containing about 2 or 3*1019 Te atoms cm-3 and changes in linewidth with annealing suggest the presence of precipitates or clusters of Te. The line broadening can be accounted for by a quadrupole resonance similar to that of Ga2Te3.
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