Abstract
Heterostructures with GaP/GaP1 − xNx and GaP/GaP1 − x − yAsxNy quantum wells grown by the MOCVD method are studied by methods of capacitance-voltage profiling and capacitive and current deep level transient spectroscopy. In heterostructures with GaP/GaP1 − xNx quantum wells, intrinsic defects with deep levels of 0.17 and 0.08 eV are revealed. It is shown that a considerable decrease in the concentration of these defects occurs with the substitution of a ternary GaP1 − xNx alloy forming the region of the quantum well by a GaP1 − x − yAsxNy quaternary alloy. The nature of emerging defects and mechanisms of decreasing their concentration are discussed.
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