Abstract
Abstract Studies of the growth of halogen molecular complexes induced in KI and KI(Pb) have been made by Raman scattering and optical absorption techniques. Their behaviour is consistent with the ideas of halogen cluster development resulting from the sequential trapping of halogen interstitials. Comparison of the results with recently published studies of KI and KI(Ca) shows that the defects responsible for the Raman scattering (I3- and higher order interstitial complexes) have the same basic nature independent of the presence of nearby impurities. Evidence that lead impurities stabilize halogen interstitials is presented.
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