Study of deep traps using the frequency-dependence of the temperature derivative of PN junction capacitance

Abstract

The frequency-dependent temperature derivative, dC dT , of PN junction capacitance has been discussed on the basis of a single-energy deep trap model. The analytic results show that dC dT is a peak function. Its peak position, being dependent on the measurement frequency, is related to the deep trap emission parameters, so that the activation energy and capture cross section can be obtained. The deep-trap density and Fermi potential, φ t, corresponding to peak temperature, can be determined by three values of capacitance on the C vs T curve. This method was applied to a gold-doped PN structure. This new method shows some advantages in comparison with the conventional admittance method.