Abstract
Third-generation thin-film solar cells based on CZTSSe are highly promising because of their excellent optoelectrical properties, earth-abundant, and non-toxicity of their constituent elements. In this work, the performance of CZTSSe-based solar cells with TiO2, CdS, and ZnSe as electron transporting materials (ETMs) was numerically investigated using the Solar Cell Capacitance Simulator (SCAPS). The effect of the active layer’s thickness and electron affinity, different buffer layers, and the contour plot of the operating temperature versus thickness of the CdS buffer layer were studied. The results show that the optimum power conversion efficiency for CdS, TiO2, and ZnSe, as the ETMs, is 23.16%, 23.13%, and 22.42%, respectively.
Highlights
We propose and simulate three device structures with buffer layers of CdS, TiO2, and ZnSe, using Solar Cell Capacitance Simulator (SCAPS)-1D software
The schematic cross-section of the thin-film solar cells (TFSCs) structure used in this study is shown in SCAPS is a program developed at the University of Gents in Belgium [6]
The most important physical parameter that governs the transport of photo-generated carriers at the CZTSSe/electron transporting materials (ETMs) heterojunction interface and influences the performance of solar cells is band alignment
Summary
Academic Editors: Bo Jin, Fei Wang, Feng Lin and Saifur Rahman Sabuj. Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Photovoltaic cells are used to convert large amounts of sunlight to electricity directly
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